Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12470094Application Date: 2009-05-21
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Publication No.: US08168520B2Publication Date: 2012-05-01
- Inventor: Gaku Sudo
- Applicant: Gaku Sudo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2008-292206 20081114
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/4763

Abstract:
A method of manufacturing a semiconductor device according to an embodiment of the present invention forms at least one pair of gate electrodes having end portions opposed to each other across a gap. The method includes forming a gate insulator and a gate electrode layer on a substrate in order, forming a first anti-reflection coating and a first resist on the gate electrode layer in order, exposing and developing the first resist, etching the gate electrode layer, using the first resist or the first anti-reflection coating as a mask, to remove the gate electrode layer from a region for forming the gap, thereby forming a hole penetrating the gate electrode layer, forming a second anti-reflection coating and a second resist on the gate electrode layer where the hole has been formed, in order, exposing and developing the second resist, and etching the gate electrode layer, using the second resist or the second anti-reflection coating as a mask, to form, from the gate electrode layer, the at least one pair of gate electrodes having the end portions opposed to each other across the gap.
Public/Granted literature
- US20100124815A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-05-20
Information query
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