Invention Grant
- Patent Title: Oxide etching method
- Patent Title (中): 氧化物蚀刻法
-
Application No.: US12305099Application Date: 2007-07-18
-
Publication No.: US08168544B2Publication Date: 2012-05-01
- Inventor: Chienliu Chang
- Applicant: Chienliu Chang
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-209859 20060801
- International Application: PCT/JP2007/064612 WO 20070718
- International Announcement: WO2008/015944 WO 20080207
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.
Public/Granted literature
- US20090149030A1 OXIDE ETCHING METHOD Public/Granted day:2009-06-11
Information query
IPC分类:
