Invention Grant
- Patent Title: Method for selective deposition and devices
- Patent Title (中): 选择性沉积和器件的方法
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Application No.: US12622496Application Date: 2009-11-20
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Publication No.: US08168546B2Publication Date: 2012-05-01
- Inventor: David H. Levy
- Applicant: David H. Levy
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent J. Lanny Tucker
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/469 ; H01L21/31

Abstract:
A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, side chains, or both backbone and side chains, multiple secondary or tertiary amide groups that are represented by the following acetamide structure: >N—C(═O)—. The deposition inhibitor material is patterned simultaneously or subsequently to its application to the substrate, to provide selected areas of the substrate effectively not having the deposition inhibitor material. A thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
Public/Granted literature
- US20110120757A1 METHOD FOR SELECTIVE DEPOSITION AND DEVICES Public/Granted day:2011-05-26
Information query
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