Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US12752828Application Date: 2010-04-01
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Publication No.: US08168547B2Publication Date: 2012-05-01
- Inventor: Toshihide Nabatame
- Applicant: Toshihide Nabatame
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles & Stockbridge P.C.
- Priority: JP2007-128692 20070515
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a main surface of a semiconductor substrate, the main surface of the semiconductor substrate is heat-treated in a non-oxidation atmosphere. Next, an oxygen supplying layer made of hafnium oxide deposited by ALD and having a thickness smaller than that of the high dielectric layer is formed on the high dielectric layer, and a cap layer made of tantalum nitride is formed. Thereafter, the main surface of the semiconductor substrate is heat-treated.
Public/Granted literature
- US20100187644A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-07-29
Information query
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