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US08168577B2 Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion 有权
后等离子体蚀刻/灰渣和含有四氟硼酸根离子的硅基抗反射涂层去除剂组合物

  • Patent Title: Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
  • Patent Title (中): 后等离子体蚀刻/灰渣和含有四氟硼酸根离子的硅基抗反射涂层去除剂组合物
  • Application No.: US12811257
    Application Date: 2009-02-05
  • Publication No.: US08168577B2
    Publication Date: 2012-05-01
  • Inventor: William R. Gemmill
  • Applicant: William R. Gemmill
  • Applicant Address: US NJ Phillipsburg
  • Assignee: Avantor Performance Materials, Inc.
  • Current Assignee: Avantor Performance Materials, Inc.
  • Current Assignee Address: US NJ Phillipsburg
  • Agency: Hoffman & Baron, LLP
  • International Application: PCT/US2009/033148 WO 20090205
  • International Announcement: WO2009/108474 WO 20090903
  • Main IPC: C11D7/50
  • IPC: C11D7/50 ;  G03F7/42
Post plasma etch/ash residue and silicon-based anti-reflective coating remover compositions containing tetrafluoroborate ion
Abstract:
A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.
Abstract(Chinese):

一种微电子清洁组合物：a）组合物的至少一种有机砜的约80％至约99％重量; b）占组合物水重量的约0.5％至约19％; 和c）组合物的约0.5重量％至约10重量％的至少一种提供四氟硼酸根离子的组分，以及d）任选的至少一种多元醇特别可用于清洁来自微电子衬底的蚀刻/灰渣残留物或具有两者的装置 Si基抗反射涂层和低k电介质。

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