The present invention provides a display device where thin film transistors are formed on a substrate on which an image display portion is formed, wherein the thin film transistors comprise: a gate electrode; a gate insulating film formed so as to cover the gate electrode; a semiconductor layer in island form which is formed on the gate insulating film so as to overlap with the gate electrode; and a pair of electrodes formed on the semiconductor layer so as to face each other, and the semiconductor layer is provided within a region where the gate electrode is formed as viewed in a plane, and formed of a crystal semiconductor layer and an amorphous semiconductor layer, which are layered in sequence on the gate electrode side, characterized in that the gate electrode is formed so as to have such a film thickness that the light transmittance is 0.3% or less at least in the region facing the semiconductor layer.