Invention Grant
US08169003B2 Termination and contact structures for a high voltage GaN-based heterojunction transistor
有权
用于高电压GaN基异质结晶体管的端接和接触结构
- Patent Title: Termination and contact structures for a high voltage GaN-based heterojunction transistor
- Patent Title (中): 用于高电压GaN基异质结晶体管的端接和接触结构
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Application No.: US13066200Application Date: 2011-04-07
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Publication No.: US08169003B2Publication Date: 2012-05-01
- Inventor: Michael Murphy , Milan Pophristic
- Applicant: Michael Murphy , Milan Pophristic
- Applicant Address: US CA San Jose
- Assignee: Power Integrations, Inc.
- Current Assignee: Power Integrations, Inc.
- Current Assignee Address: US CA San Jose
- Agency: The Law Offices of Bradley J. Bereznak
- Main IPC: H01L31/072
- IPC: H01L31/072 ; H01L31/109 ; H01L31/0328 ; H01L31/0336
Abstract:
A semiconductor device is provided that includes a substrate, a first active layer disposed over the substrate, and a second active layer disposed on the first active layer. The second active layer has a higher bandgap than the first active layer such that a two-dimensional electron gas layer arises between the first active layer and the second active layer. A termination layer, which is disposed on the second active layer, includes InGaN. Source, gate and drain contacts are disposed on the termination layer.
Public/Granted literature
- US20110215339A1 Termination and contact structures for a high voltage GaN-based heterojunction transistor Public/Granted day:2011-09-08
Information query
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