A contact structure is disclosed in which a continuous metal semiconductor alloy is located within a via contained within a dielectric material. The continuous semiconductor metal alloy is in direct contact with an upper metal line of a first metal level located atop the continuous semiconductor metal alloy and at least a surface of each source and drain diffusion region located beneath the continuous metal semiconductor alloy. The continuous metal semiconductor alloy can be derived from either a semiconductor nanowire or an epitaxial grown semiconductor material. The continuous metal semiconductor alloy includes a lower portion that is contained within an upper surface of each source and drain region, and a vertical pillar portion extending upward from the lower portion. The lower portion of the continuous metal semiconductor alloy and the vertical pillar portion are not separated by a material interface. Instead, the two portions of the continuous metal semiconductor alloy are of unitary construction, i.e., a single piece.