Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12723338Application Date: 2010-03-12
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Publication No.: US08169034B2Publication Date: 2012-05-01
- Inventor: Tatsuo Naijo
- Applicant: Tatsuo Naijo
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2009-060697 20090313
- Main IPC: H01L31/119
- IPC: H01L31/119
Abstract:
A semiconductor device includes: a drift layer of a first conductivity type; a base layer of a second conductivity type provided on the drift layer; an emitter layer of the first conductivity type provided in part of an upper portion of the base layer; a buffer layer of the first conductivity type provided below the drift layer; a high-resistance layer of the first conductivity type provided below the buffer layer; a collector layer of the second conductivity type provided in a partial region on a lower surface of the high-resistance layer; a contact layer of the first conductivity type provided in another partial region on the lower surface of the high-resistance layer; a trench gate electrode extending through the emitter layer and the base layer into the drift layer; and a gate insulating film provided between the emitter layer, the base layer, and the drift layer on one hand and the trench gate electrode on the other.
Public/Granted literature
- US20100230716A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-09-16
Information query
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