A semiconductor device, including: a semiconductor substrate; a plurality of unit cells connected in parallel with each other, each unit cell including a plurality of electric field effect transistors formed on the semiconductor substrate; a plurality of gate bus wirings each configured to connect each of the gate electrodes of the transistors constituting the unit cell; a plurality of gate pad electrodes having a multi-layered structure of conductive layers, each of the gate pad electrodes connected to the gate bus wiring; and a resistive element configured to connect adjacent gate pad electrodes and formed along at least one side of an outer peripheral portion of the gate pad electrode, and formed of at least one conductive layer of the conductive layers constituting the gate pad electrode.