Semiconductor device

Invention Grant

US08169052B2 Semiconductor device 有权

Title translation: 半导体器件

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Patent Title: Semiconductor device
Patent Title (中): 半导体器件
Application No.: US12328207

Application Date: 2008-12-04
Publication No.: US08169052B2

Publication Date: 2012-05-01
Inventor: Hirofumi Harada
Applicant: Hirofumi Harada
Applicant Address: JP Chiba-Shi, Chiba
Assignee: Seiko Instruments Inc.
Current Assignee: Seiko Instruments Inc.
Current Assignee Address: JP Chiba-Shi, Chiba
Agency: Brinks Hofer Gilson & Lione
Priority: JP2007-326022 20071218
Main IPC: H01L29/72
IPC: H01L29/72

Abstract:

A metal electrode is disposed on each of a plurality of resistor groups which are made of polycrystalline silicon resistors and constitute a resistor circuit. The metal electrode is connected to an end of the resistor via another interconnecting layer. Accordingly, the external influence which the metal electrode receives during a semiconductor manufacturing process is prevented from directly acting on the resistor, whereby resistance variation is suppressed.

Abstract(Chinese):

金属电极设置在由多晶硅电阻器制成并构成电阻电路的多个电阻器组中的每一个上。金属电极通过另一个互连层连接到电阻器的一端。因此，防止了在半导体制造过程中金属电极接收的外部影响直接作用在电阻器上，从而抑制了电阻变化。

Public/Granted literature

US20090152679A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-06-18

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/70	...双极器件
H01L29/72	....晶体管型器件，如连续响应于所施加的控制信号的