Invention Grant
- Patent Title: Resistive random access memories and methods of manufacturing the same
- Patent Title (中): 电阻随机存取存储器及其制造方法
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Application No.: US12289069Application Date: 2008-10-20
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Publication No.: US08169053B2Publication Date: 2012-05-01
- Inventor: Ki-hwan Kim , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Seung-eon Ahn , Chang-bum Lee
- Applicant: Ki-hwan Kim , Young-soo Park , Myung-jae Lee , Xianyu Wenxu , Seung-eon Ahn , Chang-bum Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0006702 20080122
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.
Public/Granted literature
- US20090184396A1 Resistive random access memories and methods of manufacturing the same Public/Granted day:2009-07-23
Information query
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