Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12466741Application Date: 2009-05-15
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Publication No.: US08169070B2Publication Date: 2012-05-01
- Inventor: Gerhard Josef Poeppel , Irmgard Escher-Poeppel
- Applicant: Gerhard Josef Poeppel , Irmgard Escher-Poeppel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L23/52
- IPC: H01L23/52

Abstract:
The semiconductor device comprises a semiconductor chip defining a first face and a second face opposite to the first face, the semiconductor chip comprising at least one contact element on the first face of the semiconductor chip, an encapsulating body encapsulating the semiconductor chip, the encapsulating body having a first face and a second face opposite to the first face, a redistribution layer extending over the semiconductor chip and the first face of the encapsulating body and containing a metallization layer comprising contact areas connected with the contact elements of the semiconductor chip, and an array of external contact elements located on the second phase of the encapsulating body.
Public/Granted literature
- US20100289095A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-11-18
Information query
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