Invention Grant
- Patent Title: Semiconductor device, manufacturing method thereof, and electronic device
- Patent Title (中): 半导体装置及其制造方法以及电子装置
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Application No.: US12748545Application Date: 2010-03-29
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Publication No.: US08169072B2Publication Date: 2012-05-01
- Inventor: Kenta Uchiyama , Akihiko Tateiwa
- Applicant: Kenta Uchiyama , Akihiko Tateiwa
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: IPUSA, PLLC
- Priority: JP2009-096024 20090410
- Main IPC: H01L23/053
- IPC: H01L23/053 ; H01L23/12

Abstract:
A disclosed semiconductor device includes a reinforcing board having first and second faces, an electronic part accommodating portion penetrating the reinforcing board, a through hole, an electronic part having a front face on which an electrode pad is formed and a back face, a through electrode installed inside the through hole, a first sealing resin filling a gap between the through electrode and an inner wall of the through hole, a second sealing resin filled into the electronic part accommodating portion while causing the bonding face of the electrode pad of the electronic part accommodating portion to be exposed to an outside, and a multi-layered wiring structure configured to include insulating layers laminated on the first face of the reinforcing board and an interconnection pattern, wherein the interconnection pattern is directly connected to the electrode pad of the electronic part and the through electrode.
Public/Granted literature
- US20100258946A1 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE Public/Granted day:2010-10-14
Information query
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