Invention Grant
- Patent Title: Semiconductor devices including first and second silicon interconnection regions
- Patent Title (中): 包括第一和第二硅互连区域的半导体器件
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Application No.: US12827375Application Date: 2010-06-30
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Publication No.: US08169074B2Publication Date: 2012-05-01
- Inventor: Jong-Man Park , Santoru Yamada
- Applicant: Jong-Man Park , Santoru Yamada
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2009-0067466 20090723
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes a first interconnection disposed on a substrate. The interconnection includes a first silicon interconnection region and a first metal interconnection region sequentially stacked on the substrate. A second interconnection includes a second silicon interconnection region and a second metal interconnection region that are stacked sequentially. The second silicon interconnection region has a lower resistivity than the first silicon interconnection region.
Public/Granted literature
- US20110020993A1 Semiconductor Device and Method of Fabricating the Same Public/Granted day:2011-01-27
Information query
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