Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12644416Application Date: 2009-12-22
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Publication No.: US08169083B2Publication Date: 2012-05-01
- Inventor: Yohei Igarashi
- Applicant: Yohei Igarashi
- Applicant Address: JP Nagano-shi
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2008-328327 20081224
- Main IPC: H01L23/13
- IPC: H01L23/13

Abstract:
A semiconductor device includes a wiring substrate having a mounting surface on which a semiconductor element is mounted. A portion of the mounting surface exposed from the semiconductor element is covered by a solder-resist layer, and an extension portion of the solder-resist layer extends from a dropping-commencing point of a liquid-state under-filling agent on the portion of the mounting surface exposed from the semiconductor element and into an area of the wiring substrate covered by the semiconductor element. A gap between the semiconductor element and the extension portion of the solder-resist layer is formed to be narrower than the gap between the semiconductor element and the mounting surface of the wiring substrate so that liquid drops of the under-filling agent dropped at the dropping-commencing point are sucked into the gap by a capillary phenomenon.
Public/Granted literature
- US20100155965A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-06-24
Information query
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