Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12696276Application Date: 2010-01-29
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Publication No.: US08169085B2Publication Date: 2012-05-01
- Inventor: Yousuke Akimoto , Makoto Wada
- Applicant: Yousuke Akimoto , Makoto Wada
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-252189 20091102
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
A semiconductor device according to one embodiment includes: a substrate; a wiring provided above the substrate and including a graphene nanoribbon layer comprising a plurality of laminated graphene nanoribbon sheets; and a wiring connecting member penetrating at least one of the plurality of graphene nanoribbon sheets for connecting the wiring and a conductive member above or below the wiring.
Public/Granted literature
- US20110101528A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2011-05-05
Information query
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