Invention Grant
- Patent Title: Multilayered piezoelectric element and method of manufacturing the same
- Patent Title (中): 多层压电元件及其制造方法
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Application No.: US12410701Application Date: 2009-03-25
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Publication No.: US08169123B2Publication Date: 2012-05-01
- Inventor: Atsushi Osawa
- Applicant: Atsushi Osawa
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-086390 20080328
- Main IPC: H01L41/08
- IPC: H01L41/08

Abstract:
In a multilayered piezoelectric element, a side insulating film is accurately formed even on a thin multilayered structure. The element includes: a multilayered structure having a step formed on a side surface of the multilayered structure such that an end of an internal electrode is located on a projecting portion of either side surface; a side insulating film for covering the end of the internal electrode on the projecting portion of the side surface; a first flat electrode formed on one principal surface of the multilayered structure; a second flat electrode formed on the other principal surface of the multilayered structure; a first side electrode formed on a first side surface of the multilayered structure and connected to a first group of electrodes; and a second side electrode formed on a second side surface of the multilayered structure and connected to a second group of electrodes.
Public/Granted literature
- US20090243442A1 MULTILAYERED PIEZOELECTRIC ELEMENT AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-10-01
Information query
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