Invention Grant
US08169123B2 Multilayered piezoelectric element and method of manufacturing the same 有权
多层压电元件及其制造方法

Multilayered piezoelectric element and method of manufacturing the same
Abstract:
In a multilayered piezoelectric element, a side insulating film is accurately formed even on a thin multilayered structure. The element includes: a multilayered structure having a step formed on a side surface of the multilayered structure such that an end of an internal electrode is located on a projecting portion of either side surface; a side insulating film for covering the end of the internal electrode on the projecting portion of the side surface; a first flat electrode formed on one principal surface of the multilayered structure; a second flat electrode formed on the other principal surface of the multilayered structure; a first side electrode formed on a first side surface of the multilayered structure and connected to a first group of electrodes; and a second side electrode formed on a second side surface of the multilayered structure and connected to a second group of electrodes.
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