Invention Grant
- Patent Title: Plasma generating apparatus
- Patent Title (中): 等离子体发生装置
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Application No.: US12149450Application Date: 2008-05-01
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Publication No.: US08169148B2Publication Date: 2012-05-01
- Inventor: Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
- Applicant: Sang Jean Jeon , Yuri Tolmachev , Su Ho Lee , Seoung Hyun Seok , Young Min Park , Won Hyuk Jang
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: Staas & Halsey LLP
- Priority: KR10-2007-0069061 20070710
- Main IPC: H01J7/24
- IPC: H01J7/24

Abstract:
A plasma generating apparatus having superior plasma generation efficiency that uses a single reaction chamber. The plasma generating apparatus includes a RF generator for providing a RF power, an antenna for generating an electromagnetic field upon receiving the RF power, a reaction chamber for exciting/ionizing a reaction gas via the electromagnetic field, and generating a plasma, and a plasma channel for absorbing the RF power, and allowing a current signal to be induced to the plasma.
Public/Granted literature
- US20090015165A1 Plasma generating apparatus Public/Granted day:2009-01-15
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