Invention Grant
- Patent Title: Semiconductor device and method of testing the same
- Patent Title (中): 半导体器件及其测试方法
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Application No.: US12589000Application Date: 2009-11-04
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Publication No.: US08169230B2Publication Date: 2012-05-01
- Inventor: Masahiko Nakabayashi
- Applicant: Masahiko Nakabayashi
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group PLLC
- Priority: JP2008-289154 20081111
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L23/58

Abstract:
A semiconductor device is formed on a semiconductor wafer. The semiconductor device has: an output buffer configured to externally output an output signal received from an internal circuit; an input buffer configured to output an input signal externally received to the internal circuit; a switch configured to control electrical connection between an output terminal of the output buffer and an input terminal of the input buffer; a first transmission path provided in a scribe region of the semiconductor wafer and connecting between the output terminal and the switch; and a second transmission path provided in the scribe region and connecting between the input terminal and the switch.
Public/Granted literature
- US20100117678A1 Semiconductor device and method of testing the same Public/Granted day:2010-05-13
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