Invention Grant
- Patent Title: Power transistor chip with built-in junction field effect transistor and application circuit thereof
- Patent Title (中): 功率晶体管芯片,内置结型场效应晶体管及其应用电路
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Application No.: US12427164Application Date: 2009-04-21
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Publication No.: US08169803B2Publication Date: 2012-05-01
- Inventor: Chih-Feng Huang , Kuo-Chin Chiu
- Applicant: Chih-Feng Huang , Kuo-Chin Chiu
- Applicant Address: TW ChuPei
- Assignee: Richtek Technology Corp.
- Current Assignee: Richtek Technology Corp.
- Current Assignee Address: TW ChuPei
- Priority: TW97150938A 20081226
- Main IPC: H02M3/335
- IPC: H02M3/335 ; H02M7/21

Abstract:
A power transistor chip and an application circuit thereof have a junction field effect transistor to act as a start-up circuit of an AC/DC voltage converter. The start-up circuit can be turned off after the PWM circuit of the AC/DC voltage converter operates normally to conserve the consumption of the power. Besides, the junction field effect transistor is built in the power transistor chip. Because the junction field effect transistor is fabricated with the same manufacturing process as the power transistor, it is capable of simplifying the entire process and lowering the production cost due to no additional mask and manufacturing process.
Public/Granted literature
- US20100165685A1 POWER TRANSISTOR CHIP WITH BUILT-IN JUNCTION FIELD EFFECT TRANSISTOR AND APPLICATION CIRCUIT THEREOF Public/Granted day:2010-07-01
Information query
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