Invention Grant
- Patent Title: NAND flash content addressable memory
- Patent Title (中): NAND闪存内容可寻址内存
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Application No.: US12020110Application Date: 2008-01-25
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Publication No.: US08169808B2Publication Date: 2012-05-01
- Inventor: Frankie F. Roohparvar
- Applicant: Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C15/00
- IPC: G11C15/00

Abstract:
NAND architecture non-volatile content addressable (CAM) memory devices and methods are described that allows for high density, low cost CAM devices. In addition, the NAND architecture non-volatile CAM memory operates with reduced power consumption characteristics for low power and portable applications. In one NAND architecture non-volatile CAM memory embodiment a wired NOR match line array is utilized. In another embodiment a NAND match line array is shown. In yet other embodiments, hierarchal addressing, hash addressing, tree search and algorithmic/hardware engine based search is detailed utilizing both conventional NAND architecture non-volatile Flash memory arrays and dedicated NAND architecture CAM arrays utilizing wired NOR and wired NAND match lines.
Public/Granted literature
- US20090190404A1 NAND FLASH CONTENT ADDRESSABLE MEMORY Public/Granted day:2009-07-30
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