Invention Grant
US08169835B2 Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer
有权
具有带氮工程隧穿结构的电荷捕获存储单元与氧氮化物隔离层
- Patent Title: Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layer
- Patent Title (中): 具有带氮工程隧穿结构的电荷捕获存储单元与氧氮化物隔离层
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Application No.: US12568272Application Date: 2009-09-28
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Publication No.: US08169835B2Publication Date: 2012-05-01
- Inventor: Jeng-Hwa Liao , Jung-Yu Shieh , Ling-Wuu Yang
- Applicant: Jeng-Hwa Liao , Jung-Yu Shieh , Ling-Wuu Yang
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A band gap engineered, charge trapping memory cell includes a charge storage structure including a trapping layer. a blocking layer, and a dielectric tunneling structure including a thin tunneling layer, a thin bandgap offset layer and a thin isolation layer comprising silicon oxynitride. The memory cell is manufactured using low thermal budget processes.
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