Invention Grant
US08169851B2 Memory device with pseudo double clock signals and the method using the same
有权
具有伪双时钟信号的存储器件及其使用方法
- Patent Title: Memory device with pseudo double clock signals and the method using the same
- Patent Title (中): 具有伪双时钟信号的存储器件及其使用方法
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Application No.: US12713561Application Date: 2010-02-26
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Publication No.: US08169851B2Publication Date: 2012-05-01
- Inventor: Min Chung Chou
- Applicant: Min Chung Chou
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology
- Current Assignee: Elite Semiconductor Memory Technology
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: G11C8/00
- IPC: G11C8/00

Abstract:
A method for operating a memory device with pseudo double clock signals comprises the steps of: generating an even clock signal and an odd clock signal, wherein the clock rates of both the even clock signal and the odd clock signal are half that of the input clock signal, and the even clock signal is the inverse signal of the odd clock signal; if the logic level of the even clock signal is 1 when receiving a trigger of a control signal, applying the even clock signal to a memory device; and if the logic level of the odd clock signal is 1 when receiving another trigger of the control signal, applying the odd clock signal to the memory device.
Public/Granted literature
- US20110211417A1 MEMORY DEVICE WITH PSEUDO DOUBLE CLOCK SIGNALS AND THE METHOD USING THE SAME Public/Granted day:2011-09-01
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