Invention Grant
- Patent Title: Radio-frequency switch circuit
- Patent Title (中): 射频开关电路
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Application No.: US12500020Application Date: 2009-07-09
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Publication No.: US08170500B2Publication Date: 2012-05-01
- Inventor: Toshiki Seshita , Hirotsugu Wakimoto
- Applicant: Toshiki Seshita , Hirotsugu Wakimoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2008-246659 20080925
- Main IPC: H04B1/44
- IPC: H04B1/44

Abstract:
A radio-frequency switch circuit of the invention includes: n-stage through FETs (field effect transistors) connected in series between the antenna terminal and each of the radio-frequency terminals, where n is a natural number; a radio-frequency leakage prevention resistor connected to a gate of the through FETs; a control signal line commonly connected to the gates of the n-stage through FETs connected to the same radio-frequency terminal; and a resistor connected to each of at least two of the control signal lines and connected to the radio-frequency leakage prevention resistor in series The two control signal lines are capacitively coupled between the resistor and the through FETs.
Public/Granted literature
- US20100073066A1 RADIO-FREQUENCY SWITCH CIRCUIT Public/Granted day:2010-03-25
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