Invention Grant
- Patent Title: Failure detecting method, failure detecting apparatus, and semiconductor device manufacturing method
- Patent Title (中): 故障检测方法,故障检测装置和半导体器件制造方法
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Application No.: US12256265Application Date: 2008-10-22
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Publication No.: US08170707B2Publication Date: 2012-05-01
- Inventor: Hiroshi Matsushita , Kenichi Kadota , Toshiyuki Aritake
- Applicant: Hiroshi Matsushita , Kenichi Kadota , Toshiyuki Aritake
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2007-281490 20071030
- Main IPC: G06F19/00
- IPC: G06F19/00

Abstract:
A method for inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting region segments in the wafer, setting a region number for each segment, calculating foreign substance density of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process cause of failure occurrence.
Public/Granted literature
- US20090117673A1 FAILURE DETECTING METHOD, FAILURE DETECTING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2009-05-07
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