Invention Grant
US08171203B2 Faster write operations to nonvolatile memory using FSInfo sector manipulation
有权
使用FSInfo扇区操作,更快地对非易失性存储器进行写操作
- Patent Title: Faster write operations to nonvolatile memory using FSInfo sector manipulation
- Patent Title (中): 使用FSInfo扇区操作,更快地对非易失性存储器进行写操作
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Application No.: US10741129Application Date: 2003-12-19
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Publication No.: US08171203B2Publication Date: 2012-05-01
- Inventor: Petro Estakhri , Sam Nemazie
- Applicant: Petro Estakhri , Sam Nemazie
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G06F12/02
- IPC: G06F12/02

Abstract:
An embodiment of the present invention includes a digital equipment system having a host for sending write commands to write files having sector information and having a controller device responsive to the commands for writing and updating FSInfo sector information. The controller controls a nonvolatile memory system organized into blocks, each block including a plurality of sector locations for storing sector information, a particular free block, designated for storing FSInfo sector information. Upon updating of the FSInfo sector, the updated FSInfo sector information is written to a next free sector of the dedicated block thereby avoiding moving the sectors of the particular block to another block, hence, improving system performance.
Public/Granted literature
- US20050055497A1 Faster write operations to nonvolatile memory by manipulation of frequently-accessed sectors Public/Granted day:2005-03-10
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