Invention Grant
- Patent Title: Force detection element
- Patent Title (中): 力检测元件
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Application No.: US12591149Application Date: 2009-11-10
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Publication No.: US08171806B2Publication Date: 2012-05-08
- Inventor: Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
- Applicant: Kentaro Mizuno , Shoji Hashimoto , Hiromichi Yasuda , Hidenori Moriya
- Applicant Address: JP Aichi
- Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
- Current Assignee: Kabushiki Kaisha Toyota Chuo Kenkyusho
- Current Assignee Address: JP Aichi
- Agency: Oliff & Berridge, PLC
- Priority: JP2008-289039 20081111
- Main IPC: G01L1/22
- IPC: G01L1/22

Abstract:
A temperature compensated force detection element is provided with a substrate, an insulation layer disposed above the substrate, and a p-type semiconductor layer disposed above the insulation layer, and a positive electrode and a negative electrode disposed apart from each other above the p-type semiconductor layer. A gauge portion being electrically connected to the positive electrode and having a higher impurity concentration than the p-type semiconductor layer, and an n-type region electrically connected to the negative electrode are formed in the p-type semiconductor layer.
Public/Granted literature
- US20100206092A1 Force detection element Public/Granted day:2010-08-19
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