Invention Grant
- Patent Title: CMP by controlling polish temperature
- Patent Title (中): CMP通过控制抛光温度
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Application No.: US12174762Application Date: 2008-07-17
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Publication No.: US08172641B2Publication Date: 2012-05-08
- Inventor: Ming-Che Ho , Jean Wang , Lawrence Chiang Sheu
- Applicant: Ming-Che Ho , Jean Wang , Lawrence Chiang Sheu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: B24B1/00
- IPC: B24B1/00
Abstract:
A method for manufacturing integrated circuits on a wafer includes providing a facility-supplied room temperature solution; controlling the temperature of the facility-supplied room temperature solution to a desired temperature set point to generate a rinse solution; and rinsing a polishing pad using the rinse solution. The wafer is then polished by means of a chemical mechanical polishing process.
Public/Granted literature
- US20100015894A1 CMP by Controlling Polish Temperature Public/Granted day:2010-01-21
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