Invention Grant
- Patent Title: Method and device for producing semiconductor wafers of silicon
- Patent Title (中): 用于制造硅半导体晶片的方法和装置
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Application No.: US12002881Application Date: 2007-12-19
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Publication No.: US08172941B2Publication Date: 2012-05-08
- Inventor: Martin Weber , Herbert Schmidt , Wilfried von Ammon
- Applicant: Martin Weber , Herbert Schmidt , Wilfried von Ammon
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102006060359 20061220
- Main IPC: C30B15/00
- IPC: C30B15/00 ; C30B21/06 ; C30B27/02 ; C30B28/10 ; C30B30/04

Abstract:
Semiconductor wafers of silicon are produced by pulling a single crystal from a melt contained in a crucible and slicing semiconductor wafers from the pulled single crystal, heat being delivered to a center of the growing single crystal at the boundary with the melt during the pulling of the single crystal, a CUSP magnetic field applied such that a neutral surface of the CUSP magnetic field intersects a pulling axis of the single crystal at a distance of at least 50 mm from a surface of the melt. An apparatus suitable therefore contains a CUSP field positioned such that a neutral field intersects the axis of the crystal in the crucible 50 mm or more from the melt surface.
Public/Granted literature
- US20080153261A1 Method and device for producing semiconductor wafers of silicon Public/Granted day:2008-06-26
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