Invention Grant
- Patent Title: Single Crystal manufacturing method
- Patent Title (中): 单晶制造方法
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Application No.: US12129719Application Date: 2008-05-30
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Publication No.: US08172943B2Publication Date: 2012-05-08
- Inventor: Masamichi Ohkubo
- Applicant: Masamichi Ohkubo
- Applicant Address: DE Munich
- Assignee: Siltronic AG
- Current Assignee: Siltronic AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: JP2007-152825 20070608
- Main IPC: C30B15/22
- IPC: C30B15/22

Abstract:
Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to pull the seed crystal. During pulling, a horizontal magnetic field positioning device applies a magnetic field in the horizontal direction to the inside of the silicon melt, fixing the magnetic field axis at a constant position from the liquid surface of the melt. Positional adjustment of the vertical position of the horizontal magnetic field is performed in advance by a magnetic field position adjusting device, and the magnetic field axis of the applied field is fixed at a constant distance lower than the liquid surface of the melt by more than 50 mm and at the same level or higher than a depth L from the melt surface at the point of tail-in.
Public/Granted literature
- US20080302294A1 Single Crystal Manufacturing Method Public/Granted day:2008-12-11
Information query
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