Invention Grant
- Patent Title: Substrate processing apparatus and semiconductor device producing method
- Patent Title (中): 基板加工装置及半导体装置的制造方法
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Application No.: US11990696Application Date: 2006-11-28
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Publication No.: US08172950B2Publication Date: 2012-05-08
- Inventor: Yoshihiko Yanagisawa , Mitsuro Tanabe
- Applicant: Yoshihiko Yanagisawa , Mitsuro Tanabe
- Applicant Address: JP Tokyo
- Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee: Hitachi Kokusai Electric Inc.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2005-345873 20051130
- International Application: PCT/JP2006/323692 WO 20061128
- International Announcement: WO2007/063838 WO 20070607
- Main IPC: H01L21/30
- IPC: H01L21/30 ; F27D11/00
Abstract:
Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.
Public/Granted literature
- US20090017641A1 Substrate processing apparatus and semiconductor device producing method Public/Granted day:2009-01-15
Information query
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