Invention Grant
- Patent Title: Tantalum sputtering target and method of manufacturing same
- Patent Title (中): 钽溅射靶及其制造方法
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Application No.: US10551732Application Date: 2004-02-19
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Publication No.: US08172960B2Publication Date: 2012-05-08
- Inventor: Kunihiro Oda , Atsushi Hukushima
- Applicant: Kunihiro Oda , Atsushi Hukushima
- Applicant Address: JP Tokyo
- Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee: JX Nippon Mining & Metals Corporation
- Current Assignee Address: JP Tokyo
- Agency: Howson & Howson LLP
- Priority: JP2003-097659 20030401
- International Application: PCT/JP2004/001915 WO 20040219
- International Announcement: WO2004/090193 WO 20041021
- Main IPC: C22C27/02
- IPC: C22C27/02 ; C22F1/18

Abstract:
Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.
Public/Granted literature
- US20070102288A1 Tantalum sputtering target and method of manufacturing same Public/Granted day:2007-05-10
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