Invention Grant
US08172960B2 Tantalum sputtering target and method of manufacturing same 有权
钽溅射靶及其制造方法

Tantalum sputtering target and method of manufacturing same
Abstract:
Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.
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