Invention Grant
- Patent Title: Magnetron sputtering electrode, and sputtering apparatus provided with magnetron sputtering electrode
- Patent Title (中): 磁控溅射电极和设置有磁控溅射电极的溅射装置
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Application No.: US12514513Application Date: 2007-11-13
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Publication No.: US08172993B2Publication Date: 2012-05-08
- Inventor: Yasuhiko Akamatsu , Tatsunori Isobe , Makoto Arai , Junya Kiyota , Takashi Komatsu
- Applicant: Yasuhiko Akamatsu , Tatsunori Isobe , Makoto Arai , Junya Kiyota , Takashi Komatsu
- Applicant Address: JP Kanagawa
- Assignee: Ulvac, Inc.
- Current Assignee: Ulvac, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Cermak Nakajima LLP
- Agent Tomoko Nakajima
- Priority: JP2006-311623 20061117; JP2006-311624 20061117
- International Application: PCT/JP2007/071965 WO 20071113
- International Announcement: WO2008/059814 WO 20080522
- Main IPC: C23C14/35
- IPC: C23C14/35

Abstract:
In a magnetron sputtering apparatus an arrangement is made such that the peripheral portion of a target is uniformly eroded to attain a high efficiency in target utilization and, in addition, that an abnormal discharging hardly occurs to thereby enable satisfactory thin film forming. A magnet assembly is provided behind a target that is disposed opposite to the process substrate. This magnet assembly has a central magnet that is disposed linearly along the longitudinal direction, and a peripheral magnet that is disposed so as to enclose the periphery of the central magnet, while changing the polarity on the side of the target. At this time, among the respective magnetic fluxes generated between the central magnet and the peripheral magnet at the longitudinally end portions of the magnet assembly, the position at which the vertical component of the magnetic field becomes zero is locally shifted to the central magnet within a certain range.
Public/Granted literature
- US20100051454A1 MAGNETRON SPUTTERING ELECTRODE, AND SPUTTERING APPARATUS PROIDED WITH MAGNETRON SPUTTERING ELECTRODE Public/Granted day:2010-03-04
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