Invention Grant
- Patent Title: Measurement of etching
- Patent Title (中): 蚀刻测量
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Application No.: US12356942Application Date: 2009-01-21
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Publication No.: US08173032B2Publication Date: 2012-05-08
- Inventor: Ted W. Barnes , Victorio Chavarria , William J. Sudyka , Adam Ghozeil , Timothy R. Emery
- Applicant: Ted W. Barnes , Victorio Chavarria , William J. Sudyka , Adam Ghozeil , Timothy R. Emery
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: B44C1/22
- IPC: B44C1/22
Abstract:
Methods and apparatus for determining the extent of etching in material by locating a detector element adjacent to a portion of the material that is to be etched. The width of the element varies. The resistance of the element is measured upon etching the portion.
Public/Granted literature
- US20090127225A1 MEASUREMENT OF ETCHING Public/Granted day:2009-05-21
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