Invention Grant
- Patent Title: Methods of utilizing block copolymer to form patterns
- Patent Title (中): 利用嵌段共聚物形成图案的方法
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Application No.: US12272517Application Date: 2008-11-17
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Publication No.: US08173034B2Publication Date: 2012-05-08
- Inventor: Dan Millward , Stephen J. Kramer , Gurtej S. Sandhu
- Applicant: Dan Millward , Stephen J. Kramer , Gurtej S. Sandhu
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: C03C15/00
- IPC: C03C15/00 ; C03C25/68 ; C23F1/00 ; B44C1/22

Abstract:
Some embodiments include methods of utilizing block copolymer to form patterns between weirs. The methods may utilize liners along surfaces of the weirs to compensate for partial-width segments of the patterns in regions adjacent the weirs. Some embodiments include methods in which spaced apart structures are formed over a substrate, and outer surfaces of the structures are coated with a thickness of coating. Diblock copolymer is used to form a pattern across spaces between the structures. The diblock copolymer includes a pair of block constituents that have different affinities for the coating relative to one another. The pattern includes alternating segments, with the segments adjacent to the coating being shorter than the segments that are not adjacent to the coating. The coating thickness is about the amount by which the segments adjacent to the coating are shorter than the segments that are not adjacent to the coating.
Public/Granted literature
- US20100124826A1 Methods Of Utilizing Block Copolymer To Form Patterns Public/Granted day:2010-05-20
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