Invention Grant
- Patent Title: Silicon carbide based porous material and method for production thereof
- Patent Title (中): 基于碳化硅的多孔材料及其制造方法
-
Application No.: US12210434Application Date: 2008-09-15
-
Publication No.: US08173054B2Publication Date: 2012-05-08
- Inventor: Yuuichirou Tabuchi , Masahiro Furukawa , Kenji Morimoto , Shinji Kawasaki
- Applicant: Yuuichirou Tabuchi , Masahiro Furukawa , Kenji Morimoto , Shinji Kawasaki
- Applicant Address: JP Nagoya
- Assignee: NGK Insulators, Ltd.
- Current Assignee: NGK Insulators, Ltd.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown
- Priority: JP2002-097260 20020329
- Main IPC: C04B33/32
- IPC: C04B33/32

Abstract:
A silicon carbide-based porous material is provided, including silicon carbide particles as an aggregate, metallic silicon and an oxide phase containing Si, Al and an alkaline earth metal. The silicon carbide-based porous material is high in porosity and strength and superior in oxidation resistance and thermal shock resistance and, when used as a filter, has a very low risk of fluid leakage causing defects such as cuts and the like, as well as a low pressure loss.
Public/Granted literature
- US20090020902A1 SILICON CARBIDE BASED POROUS MATERIAL AND METHOD FOR PRODUCTION THEREOF Public/Granted day:2009-01-22
Information query