Invention Grant
US08173095B2 Method and apparatus for producing graphene oxide layers on an insulating substrate
有权
在绝缘基板上制造氧化石墨烯层的方法和装置
- Patent Title: Method and apparatus for producing graphene oxide layers on an insulating substrate
- Patent Title (中): 在绝缘基板上制造氧化石墨烯层的方法和装置
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Application No.: US12241555Application Date: 2008-09-30
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Publication No.: US08173095B2Publication Date: 2012-05-08
- Inventor: Walt A. de Heer , Xiaosong Wu , Michael Sprinkle , Claire Berger
- Applicant: Walt A. de Heer , Xiaosong Wu , Michael Sprinkle , Claire Berger
- Applicant Address: US GA Atlanta
- Assignee: Georgia Tech Research Corporation
- Current Assignee: Georgia Tech Research Corporation
- Current Assignee Address: US GA Atlanta
- Agency: Bockhop & Associates, LLC
- Agent Bryan W. Bockhop
- Main IPC: C01B31/04
- IPC: C01B31/04 ; H01L29/24 ; H01L21/31 ; H01L21/311

Abstract:
In a method of making a functionalized graphitic structure, a portion of a multi-layered graphene surface extending from a silicon carbide substrate is exposed to an acidic environment so as to separate graphene layers in a portion of the multi-layered graphene surface. The portion of the multi-layered graphene surface is exposed to a functionalizing material that binds to carbon atoms in the graphene sheets so that the functionalizing material remains between the graphene sheets, thereby generating a functionalized graphitic structure. The functionalized graphitic structure is dried in an inert environment.
Public/Granted literature
- US20090236609A1 Method and Apparatus for Producing Graphene Oxide Layers on an Insulating Substrate Public/Granted day:2009-09-24
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