Invention Grant
- Patent Title: Method for fabricating ZnO thin films
- Patent Title (中): 制造ZnO薄膜的方法
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Application No.: US12126380Application Date: 2008-05-23
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Publication No.: US08173205B2Publication Date: 2012-05-08
- Inventor: Jeong Na Heo , Jeong Hee Lee
- Applicant: Jeong Na Heo , Jeong Hee Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Cantor & Colburn LLP
- Priority: KR10-2007-0076920 20070731
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
Disclosed is a method for fabricating ZnO thin films using a ZnO precursor solution containing zinc hydroxide nitrate (Zn5(OH)8(NO3)2.2H2O) as a zinc supplier. The ZnO thin film is fabricated by using a simple and economical coating method at a low process temperature.
Public/Granted literature
- US20090035457A1 METHOD FOR FABRICATING ZnO THIN FILMS Public/Granted day:2009-02-05
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