Invention Grant
- Patent Title: Reflection-type exposure mask and method of manufacturing a semiconductor device
- Patent Title (中): 反射式曝光掩模和半导体器件的制造方法
-
Application No.: US12749250Application Date: 2010-03-29
-
Publication No.: US08173332B2Publication Date: 2012-05-08
- Inventor: Takashi Kamo , Osamu Suga
- Applicant: Takashi Kamo , Osamu Suga
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Renesas Technology Corp.
- Current Assignee: Kabushiki Kaisha Toshiba,Renesas Technology Corp.
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-172367 20090723
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.
Public/Granted literature
- US20110020737A1 REFLECTION-TYPE EXPOSURE MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2011-01-27
Information query