Invention Grant
US08173357B2 Method of forming etching mask, etching method using the etching mask, and method of fabricating semiconductor device including the etching method
有权
形成蚀刻掩模的方法，使用蚀刻掩模的蚀刻方法以及包括蚀刻方法的半导体器件的制造方法
- Patent Title: Method of forming etching mask, etching method using the etching mask, and method of fabricating semiconductor device including the etching method
- Patent Title (中): 形成蚀刻掩模的方法，使用蚀刻掩模的蚀刻方法以及包括蚀刻方法的半导体器件的制造方法
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Application No.: US12407244Application Date: 2009-03-19
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Publication No.: US08173357B2Publication Date: 2012-05-08
- Inventor: Eiichi Nishimura
- Applicant: Eiichi Nishimura
- Applicant Address: JP
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2008-115498 20080425
- Main IPC: G03F7/36
- IPC: G03F7/36
Abstract:
The method of forming an etching mask includes: forming a mask layer on an object layer that is to be etched, to form an etching mask used in etching the object layer; forming a first mask layer on the mask layer, the first mask layer having a first pattern that is to be transferred onto the mask layer; forming a second mask layer on the first mask layer, the second mask layer having a second pattern that is to be transferred onto the mask layer; obtaining a third mask layer having the first pattern and the second pattern, by transferring the second pattern of the second mask layer onto the first mask layer; and forming the etching mask used in the etching of the object layer, by etching the mask layer using the third mask layer.
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Information query
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