Invention Grant
- Patent Title: Magnetoresistive element and magnetic memory
- Patent Title (中): 磁阻元件和磁记忆体
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Application No.: US12851275Application Date: 2010-08-05
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Publication No.: US08173447B2Publication Date: 2012-05-08
- Inventor: Tomomasa Ueda , Hisanori Aikawa , Masatoshi Yoshikawa , Naoharu Shimomura , Masahiko Nakayama , Sumio Ikegawa , Keiji Hosotani , Makoto Nagamine
- Applicant: Tomomasa Ueda , Hisanori Aikawa , Masatoshi Yoshikawa , Naoharu Shimomura , Masahiko Nakayama , Sumio Ikegawa , Keiji Hosotani , Makoto Nagamine
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-016930 20070126
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L2/336 ; H01L21/20 ; H01L21/469
Abstract:
A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.
Public/Granted literature
- US20100315864A1 MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY Public/Granted day:2010-12-16
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