Invention Grant
US08173455B2 Phosphor coating method for fabricating light emitting semiconductor device and applications thereof 有权
用于制造发光半导体器件的荧光体涂覆方法及其应用

  • Patent Title: Phosphor coating method for fabricating light emitting semiconductor device and applications thereof
  • Patent Title (中): 用于制造发光半导体器件的荧光体涂覆方法及其应用
  • Application No.: US13013960
    Application Date: 2011-01-26
  • Publication No.: US08173455B2
    Publication Date: 2012-05-08
  • Inventor: Tzu-Hao Chao
  • Applicant: Tzu-Hao Chao
  • Applicant Address: TW New Taipei
  • Assignee: Everlight Electronics Co., Ltd.
  • Current Assignee: Everlight Electronics Co., Ltd.
  • Current Assignee Address: TW New Taipei
  • Agency: Han IP Law PLLC
  • Agent Andy M. Han
  • Priority: TW96132098A 20070829
  • Main IPC: H01L21/00
  • IPC: H01L21/00
Phosphor coating method for fabricating light emitting semiconductor device and applications thereof
Abstract:
A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.
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