Invention Grant
- Patent Title: Phosphor coating method for fabricating light emitting semiconductor device and applications thereof
- Patent Title (中): 用于制造发光半导体器件的荧光体涂覆方法及其应用
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Application No.: US13013960Application Date: 2011-01-26
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Publication No.: US08173455B2Publication Date: 2012-05-08
- Inventor: Tzu-Hao Chao
- Applicant: Tzu-Hao Chao
- Applicant Address: TW New Taipei
- Assignee: Everlight Electronics Co., Ltd.
- Current Assignee: Everlight Electronics Co., Ltd.
- Current Assignee Address: TW New Taipei
- Agency: Han IP Law PLLC
- Agent Andy M. Han
- Priority: TW96132098A 20070829
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A phosphor coating method for fabricating a light-emitting semiconductor is provided. The phosphor coating method comprises the steps as follows: First a light emitting semiconductor wafer having a plurality of die units formed thereon is provided, and a photoresist is then formed on the light emitting semiconductor wafer to cover the die units. A pattern process is conducted to form a plurality of openings associated with the die units, whereby each die can be exposed via one of the openings. Subsequently, a compound mixed with phosphor is filled into the openings.
Public/Granted literature
- US20110114982A1 PHOSPHOR COATING METHOD FOR FABRICATING LIGHT EMITTING SEMICONDUCTOR DEVICE AND APPLICATIONS THEREOF Public/Granted day:2011-05-19
Information query
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