Invention Grant
- Patent Title: Process for fabrication of nitride semiconductor light emitting device
- Patent Title (中): 氮化物半导体发光器件的制造方法
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Application No.: US12088076Application Date: 2006-09-25
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Publication No.: US08173461B2Publication Date: 2012-05-08
- Inventor: Yasuhito Urashima
- Applicant: Yasuhito Urashima
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2005-277119 20050926
- International Application: PCT/JP2006/319608 WO 20060925
- International Announcement: WO2007/034998 WO 20070329
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.
Public/Granted literature
- US20090170224A1 PROCESS FOR FABRICATION OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2009-07-02
Information query
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