Manufacturing method of nitride crystalline film, nitride film and substrate structure

Invention Grant

US08173462B2 Manufacturing method of nitride crystalline film, nitride film and substrate structure 有权

Title translation: 氮化物结晶膜，氮化物膜和衬底结构的制造方法

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Patent Title: Manufacturing method of nitride crystalline film, nitride film and substrate structure
Patent Title (中): 氮化物结晶膜，氮化物膜和衬底结构的制造方法
Application No.: US12399036

Application Date: 2009-03-06
Publication No.: US08173462B2

Publication Date: 2012-05-08
Inventor: Cheng-Huang Kuo , Chi-Wen Kuo , Chun-Ju Tun
Applicant: Cheng-Huang Kuo , Chi-Wen Kuo , Chun-Ju Tun
Applicant Address: TW Taoyuan
Assignee: National Central University
Current Assignee: National Central University
Current Assignee Address: TW Taoyuan
Agency: Jianq Chyun IP Office
Priority: TW97143404A 20081110
Main IPC: H01L21/306
IPC: H01L21/306 ; H01L21/465

Manufacturing method of nitride crystalline film, nitride film and substrate structure

Abstract:

A manufacturing method of a nitride crystalline film includes following steps. First, a substrate is provided. Next, a first nitride crystalline film is formed on the substrate. A patterned mask is then formed on the first nitride crystalline film. The patterned mask covers a first part of the first nitride crystalline film and exposes a second part of the first nitride crystalline film. Afterwards, the second part is etched, and the first part is maintained. After that, the patterned mask is removed. The first part is then etched to form a plurality of nitride crystal nuclei. Next, a second nitride crystalline film is formed on the substrate, and the second nitride crystalline film is made to cover the nitride crystal nuclei. A nitride film and a substrate structure are also provided.

Abstract(Chinese):

氮化物结晶膜的制造方法包括以下步骤。首先，提供基板。接下来，在基板上形成第一氮化物结晶膜。然后在第一氮化物晶体膜上形成图案化掩模。图案化掩模覆盖第一氮化物结晶膜的第一部分并暴露第一氮化物结晶膜的第二部分。之后，蚀刻第二部分，并保持第一部分。之后，去除图案化的掩模。然后蚀刻第一部分以形成多个氮化物晶核。接下来，在基板上形成第二氮化物结晶膜，并且使第二氮化物结晶膜覆盖氮化物晶核。还提供了氮化物膜和衬底结构。

Public/Granted literature

US20100119845A1 MANUFACTURING METHOD OF NITRIDE CRYSTALLINE FILM, NITRIDE FILM AND SUBSTRATE STRUCTURE Public/Granted day:2010-05-13

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Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）