Invention Grant
- Patent Title: Method of fabricating a light emitting device with a p-type dopant
- Patent Title (中): 用p型掺杂剂制造发光器件的方法
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Application No.: US12940407Application Date: 2010-11-05
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Publication No.: US08173463B2Publication Date: 2012-05-08
- Inventor: Hyo Kun Son
- Applicant: Hyo Kun Son
- Applicant Address: KR Seoul
- Assignee: LG Innotek Co., Ltd.
- Current Assignee: LG Innotek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2010-0004100 20100115
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to apply a first current to the light emitting device. The power source part supplies power to the first and second contact parts. The loading plate supports and heats the light emitting device. The chamber accommodates the light emitting device, the first and second contact parts, and the loading plate, and has a vacuum state or oxygen atmosphere.
Public/Granted literature
- US20110177628A1 LIGHT EMITTING DEVICE FABRICATING APPARATUS AND LIGHT EMITTING DEVICE FABRICATING METHOD USING THE SAME Public/Granted day:2011-07-21
Information query
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