Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12727809Application Date: 2010-03-19
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Publication No.: US08173464B2Publication Date: 2012-05-08
- Inventor: Mitsunori Yokoyama
- Applicant: Mitsunori Yokoyama
- Applicant Address: JP Yokohama, Kanagawa
- Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee: Sumitomo Electric Device Innovations, Inc.
- Current Assignee Address: JP Yokohama, Kanagawa
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2009-069304 20090323
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method for fabricating a semiconductor device includes growing an AlN layer by MOVPE in which a nitrogen-source flow ratio at a far side from a substrate is set lower than that at a near side, the nitrogen-source flow ratio being a ratio of a flow rate of a nitrogen source to a total flow rate of growth gas; and growing a GaN-based semiconductor layer on the AlN layer by MOVPE.
Public/Granted literature
- US20100240198A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2010-09-23
Information query
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