Invention Grant
- Patent Title: Image sensor and method for manufacturing the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US12612716Application Date: 2009-11-05
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Publication No.: US08173480B2Publication Date: 2012-05-08
- Inventor: Ki-Jun Yun , Sang-Wook Ryu
- Applicant: Ki-Jun Yun , Sang-Wook Ryu
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2008-0111420 20081111
- Main IPC: H01L31/02
- IPC: H01L31/02

Abstract:
An image sensor and a method of manufacturing an image sensor. A method of manufacturing an image sensor may include forming an interconnection and/or an interlayer dielectric over a semiconductor substrate including circuitry connected to an interconnection. A method of manufacturing an image sensor may include forming a photodiode having a first doping layer and/or a second doping layer over an interlayer dielectric, and forming a via hole through a photodiode, which may expose a portion of a surface of an interconnection. A method of manufacturing an image sensor may include forming a barrier pattern over a via hole which may cover an exposed surface of a second doping layer, and a contact plug on and/or over a via hole, which may connect an interconnection and a first doping layer. An upper portion of a contact plug may be etched. An insulating layer may be formed over a contact plug.
Public/Granted literature
- US20100117173A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2010-05-13
Information query
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