Invention Grant
- Patent Title: Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
- Patent Title (中): 采用选择性生长的可逆电阻切换元件的存储单元及其形成方法
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Application No.: US12915290Application Date: 2010-10-29
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Publication No.: US08173486B2Publication Date: 2012-05-08
- Inventor: April D. Schricker , S. Brad Herner , Mark H. Clark
- Applicant: April D. Schricker , S. Brad Herner , Mark H. Clark
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/02
- IPC: H01L29/02
Abstract:
In some aspects, a method of forming a memory cell is provided that includes (1) forming a steering element above a substrate; and (2) selectively forming a reversible resistance-switching element coupled to the steering element by: (a) forming a material layer on the substrate; (b) etching the material layer; and (c) oxidizing the etched material layer to form a reversible resistance-switching material. Numerous other aspects are provided.
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