Invention Grant
- Patent Title: Method of manufacturing thin film transistor substrate
- Patent Title (中): 制造薄膜晶体管基板的方法
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Application No.: US12509290Application Date: 2009-07-24
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Publication No.: US08173492B2Publication Date: 2012-05-08
- Inventor: Je-hun Lee , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- Applicant: Je-hun Lee , Chang-oh Jeong , Beom-seok Cho , Yang-ho Bae
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0064486 20050715
- Main IPC: H01L21/28
- IPC: H01L21/28

Abstract:
Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer disposed on a lower structure, a copper conductive layer comprising copper or copper alloy disposed on the barrier layer, an intermediate layer comprising copper nitride disposed on the copper conductive layer, and a capping layer disposed on the intermediate layer.
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