Invention Grant
US08173492B2 Method of manufacturing thin film transistor substrate 有权
制造薄膜晶体管基板的方法

Method of manufacturing thin film transistor substrate
Abstract:
Provided are a wire structure, a method of forming a wire, a thin film transistor (TFT) substrate, and a method of manufacturing the TFT substrate. The wire structure includes a barrier layer disposed on a lower structure, a copper conductive layer comprising copper or copper alloy disposed on the barrier layer, an intermediate layer comprising copper nitride disposed on the copper conductive layer, and a capping layer disposed on the intermediate layer.
Information query
Patent Agency Ranking
0/0